Paper Title:
Electronic Transport Properties of SiC Nanotube with Antisite Defect
  Abstract

The electronic transport properties of an (8, 0) SiC nanotube (SiCNT) with antisite defect are investigated with the method combined non-equilibrium Green’s function with density functional theory, in which the defect is formed with a carbon atom being substituted by a silicon atom. In transmission spectrum of the nanotube, a transmission valley about 1.68 eV near the Fermi energy is discovered, which indicates that the nanotube is a wide band-gap semiconductor. In its current-voltage characteristic, turn-on voltages of ±1.0 V are found under positive and negative bias. This originates from more orbital participating in its electronic transport properties caused by the bias. These results are meaningful to investigations on working mechanisms of SiCNT electronic devices.

  Info
Periodical
Chapter
Chapter 24: Semiconductor Materials Manufacturing
Edited by
Wu Fan
Pages
5495-5499
DOI
10.4028/www.scientific.net/AMM.110-116.5495
Citation
J. X. Song, H. X. Liu, "Electronic Transport Properties of SiC Nanotube with Antisite Defect", Applied Mechanics and Materials, Vols. 110-116, pp. 5495-5499, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Yoshino, Y. Shinzato, Masahiko Morinaga
Abstract:Formation energies of various defects in Al2O3 and SiO2 are calculated by using the plane-wave...
713
Authors: Daniel Macdonald, Prakash N.K. Deenapanray, Andres Cuevas, S. Diez, Stephan W. Glunz
Abstract:Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier-induced defect, usually...
497
Authors: Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, Hisayoshi Itoh
Abstract:From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200...
379
Authors: Hui Ling Zhang, Qun Bo Fan, Fu Chi Wang, Feng Zhang
Abstract:To enhance the high-temperature stability of zirconate pyrochlore structures, one has to focus on their transformation to the disordered...
1689
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427