Paper Title:
Determining of Infrared Transition of InN Film Grown on C-Plane Sapphire by Photoreflectance
  Abstract

An InN film was grown on sapphire (c-plane) by plasma-assisted molecular beam epitaxy, and its photoluminescence at 10 K and photoreflectance (PR) spectra from 10 K to 110 K were measured. Some prominent features in the PR spectra were observed in the infrared region below 120 K. The signals become too weak to observable for temperature above 110K. Furthermore, the binding energy of InN exciton was estimated to be 9.43 meV, which is equal to kBT at 109K. Therefore, the features in the PR spectra were assigned to the A, B, and C excitonic transitions associated with the direct gap of wurtzite InN. The thus obtained energies of the A, B, and C excitonic transitions versus temperature were fitted well by Varshini’s equation. The energies of the A, B, and C excitonic transitions at room temperature obtained by the best fit of Varshni’s equation are 0.738, 0.746, and 0.764 eV, respectively.

  Info
Periodical
Chapter
Chapter 4: Surface, Subsurface, and Interface Phenomena
Edited by
Wu Fan
Pages
985-990
DOI
10.4028/www.scientific.net/AMM.110-116.985
Citation
D. P. Wang, L. W. Tu, "Determining of Infrared Transition of InN Film Grown on C-Plane Sapphire by Photoreflectance", Applied Mechanics and Materials, Vols. 110-116, pp. 985-990, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: S. Lazić, J.M. Calleja, F.B. Naranjo, S. Fernández, Enrique Calleja
Abstract:We present resonant Raman scattering measurements on strained and relaxed InxGa1-xN/GaN multiple quantum wells. The pseudomorphic sample...
19
Authors: Yutaka Tokuda, Youichi Matsuoka, Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi
Abstract:Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two...
1297
Authors: Zhen Sheng Lee, Ling Min Kong, Zhe Chuan Feng, Gang Li, Hung Lin Tsai, Jer Ren Yang
Abstract:Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) have been studied by temperature dependent photoluminescence...
445
Authors: Ting Wei Kuo, Ling Min Kong, Zhe Chuan Feng, Wei Liu, Soo Jin Chua, Ying Sheng Huang
Chapter 9: Nano Materials
Abstract:Luminescence properties of blue emission InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), grown on sapphire substrates by...
1133
Authors: Xin Dong, Jin Wang, Hui Wang, Zhi Feng Shi, Bao Lin Zhang
Chapter 01: Organization, Defects and Performance of Material
Abstract:NiZnO films were grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in vacuum at...
11