Paper Title:
Effects of Annealing Temperature on Properties of CuIn (Se,S)2 Film Prepared by Sputtering
  Abstract

This paper examines CuIn(Se,S)2 (CISS) films prepared by sputtering precursor films of In, Cu, and In2S3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

  Info
Periodical
Chapter
Chapter 7: Functional Materials
Edited by
Huixuan Zhang, Ye Han, Fuxiao Chen and Jiuba Wen
Pages
1284-1288
DOI
10.4028/www.scientific.net/AMM.117-119.1284
Citation
Y. C. Lin, Z. J. Chen, L. C. Wang, "Effects of Annealing Temperature on Properties of CuIn (Se,S)2 Film Prepared by Sputtering", Applied Mechanics and Materials, Vols. 117-119, pp. 1284-1288, 2012
Online since
October 2011
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$32.00
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