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Effect of bct-5 Si on the Indentation of Monocrystalline Silicon

Journal Applied Mechanics and Materials (Volumes 117 - 119)
Volume Materials and Computational Mechanics
Edited by Huixuan Zhang, Ye Han, Fuxiao Chen and Jiuba Wen
Pages 666-669
DOI 10.4028/www.scientific.net/AMM.117-119.666
Citation Kausala Mylvaganam et al., 2011, Applied Mechanics and Materials, 117-119, 666
Online since October, 2011
Authors Kausala Mylvaganam, Liang Chi Zhang
Keywords Bct-5 Silicon, Indentation, Molecular Dynamics (MD), Scratching, Silicon
Abstract

Mono-crystalline silicon experiences various phase transformations under different loading conditions. This paper reveals, with the aid of molecular dynamics simulations, that scratching the silicon {001} surface along the [110] direction under a load of 0.8 µN or more would produce stable 5 coordinated body centered tetragonal (bct-5) silicon in the subsurface. By examining the effect of this bct-5 silicon on indentation, it was found that the resistant to deformation of bct-5 silicon is higher than a-Si but lower than diamond Si.

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