Effect of bct-5 Si on the Indentation of Monocrystalline Silicon |
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| Journal | Applied Mechanics and Materials (Volumes 117 - 119) |
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| Volume | Materials and Computational Mechanics |
| Edited by | Huixuan Zhang, Ye Han, Fuxiao Chen and Jiuba Wen |
| Pages | 666-669 |
| DOI | 10.4028/www.scientific.net/AMM.117-119.666 |
| Citation | Kausala Mylvaganam et al., 2011, Applied Mechanics and Materials, 117-119, 666 |
| Online since | October, 2011 |
| Authors | Kausala Mylvaganam, Liang Chi Zhang |
| Keywords | Bct-5 Silicon, Indentation, Molecular Dynamics (MD), Scratching, Silicon |
| Abstract | Mono-crystalline silicon experiences various phase transformations under different loading conditions. This paper reveals, with the aid of molecular dynamics simulations, that scratching the silicon {001} surface along the [110] direction under a load of 0.8 µN or more would produce stable 5 coordinated body centered tetragonal (bct-5) silicon in the subsurface. By examining the effect of this bct-5 silicon on indentation, it was found that the resistant to deformation of bct-5 silicon is higher than a-Si but lower than diamond Si. |
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