Paper Title:
Simulative Analysis of Carry Out Fontusing near Field Photolithography
  Abstract

Adopting the concepts of integration and cumulative sum of exposure energy in the intersecting region between two fabricated line segments, an analytical method of exposure energy density equation for near field photolithography of font fabrication is established. At the same time, cutting photoresist into limited nodes, together with the use of the integral equation of exposure energy density and Mack’s developing model, the full-width at half maximum (FWHM) and fabrication profile of font can be calculated. As analyzed in the study, in the intersecting region between two fabricated line segments, the greater the exposure energy, the deeper the fabrication depth; while in the straight-line region of fabricated lines, as the exposure energy is equal, all the fabrication depths are the same. The research analysis of the paper can be a reference for near field photolithography of font.

  Info
Periodical
Chapter
Chapter 3: Advanced Manufacturing Technology
Edited by
Jiuba Wen, Fuxiao Chen, Ye Han and Huixuan Zhang
Pages
418-425
DOI
10.4028/www.scientific.net/AMM.120.418
Citation
C. B. Yang, H. L. Chiang, C. C. Chen, "Simulative Analysis of Carry Out Fontusing near Field Photolithography", Applied Mechanics and Materials, Vol. 120, pp. 418-425, 2012
Online since
October 2011
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Price
$32.00
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