Paper Title:
Study on the Impact of the Cutting Process of Wire Saw on SiC Wafers
  Abstract

Based on reciprocating electroplated diamond wire saw cutting SiC wafers experiments, the influences law of wire saw diameter, wire saw quality, wire saw speed, wire saw wear and cutting fluid on cutting rate and wafers surface quality was studied. The results indicate that cutting rate increase with wire saw diameter and wire saw speed increase, and decreases with wire saw wear; wafers surface roughness increase with wire saw diameter increase and wire saw wear and a slightly lower with wire saw speed increase; TTV (total thickness variation) is risen slightly with wire saw diameter increase; wire saw wear and insufficient cutting fluid supply are the main factors to cause cutting time increase and wafers quality decline. And the experimental results were analyzed.

  Info
Periodical
Chapter
Chapter 6: Other Related Topics
Edited by
Jiuba Wen, Fuxiao Chen, Ye Han and Huixuan Zhang
Pages
593-597
DOI
10.4028/www.scientific.net/AMM.120.593
Citation
X. Y. Wang, Y. Li, S. J. Li, "Study on the Impact of the Cutting Process of Wire Saw on SiC Wafers", Applied Mechanics and Materials, Vol. 120, pp. 593-597, 2012
Online since
October 2011
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Price
$32.00
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