Paper Title:
Effects of High Dielectric Constant Abrasives on ECMP
  Abstract

ECMP (Electro-Chemical Mechanical Polishing) presents high removal rate, low polishing pressure and good polished surface because the action of electrochemistry accelerates copper dissolution. It is considered to be a most promising novel Cu planarization process to replace traditional CMP (Chemical Mechanical Polishing). However, the micro asperity heights of coarse surface are often too small compared to the distance between anode and cathode, so the asperities are difficult to be selectively removed. In this paper, high dielectric constant abrasives were used in ECMP to solve this problem. High dielectric constant abrasives can improve the distribution of electric field, amplify the gradient of electric field and enhance the ability of selective removal. Based on the results of experiments, rutile TiO2, as one of high dielectric constant abrasives, is better than SiO2 and anatase TiO2 in ECMP process. The material removal rate of electrolyte containing rutile TiO2 is 0.078mg/min, and the surface roughness is Ra18.2nm.

  Info
Periodical
Chapter
Chapter 6: Frontiers of Mechanical Engineering (1)
Edited by
Dongye Sun, Wen-Pei Sung and Ran Chen
Pages
3263-3267
DOI
10.4028/www.scientific.net/AMM.121-126.3263
Citation
W. S. Li, D. M. Guo, Z. J. Jin, Z. Wang, Z. W. Yuan, "Effects of High Dielectric Constant Abrasives on ECMP", Applied Mechanics and Materials, Vols. 121-126, pp. 3263-3267, 2012
Online since
October 2011
Keywords
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$32.00
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