Paper Title:
Design and Analysis of Ultra-Low Speed Movement Equipment System
  Abstract

Czochralski lifting device is the key equipment for crystal growth. Due to laser crystal growth mechanism could decide its slow growth speed, so Lifting device is required to operate under the ultra-low speed situation chronically. According to shock, shake, fraction and crawl of movement system affected speed stability, the paper carries out a nobel design to laser Czochralski lifting system through alternated servo technology and its precision is analyzed comprenshensively. The long-term experimental data showed by using changed plus PID control method that the system has high precision and better reliability and it is suitable to grow large-size laser crystal. Meanwhile, the design system makes use of common spare parts and can meet the requirements for large scale industrialization.

  Info
Periodical
Edited by
Han Zhao
Pages
1475-1479
DOI
10.4028/www.scientific.net/AMM.130-134.1475
Citation
F. Y. Dai, W. G. Ji, J. S. Cao, "Design and Analysis of Ultra-Low Speed Movement Equipment System", Applied Mechanics and Materials, Vols. 130-134, pp. 1475-1479, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jing He Wang, Ming Jun Chen, Shen Dong, H.X. Wang, J.H. Zhang, Wen Jun Zong
Abstract:In this paper, mechanical characteristics of KDP crystal anisotropy are analysed theoretically. Vickers indentation experiments are adopted...
409
Authors: Shao Long Guo, Fei Hu Zhang, Yong Zhang, Dian Rong Luan
Abstract:The characteristics and principle of deliquescent polishing technology for potassium dihydrogen phosphate (KDP) crystals are introduced, and...
53
Authors: Yasushi Urakami, Itaru Gunjishima, Satoshi Yamaguchi, Hiroyuki Kondo, Fusao Hirose, Ayumu Adachi, Shoichi Onda
Chapter 1: SiC Bulk Growth
Abstract:A reduction in threading screw dislocation (TSD) density in 4H-SiC (silicon carbide) crystal is required for SiC power devices. In this...
9
Authors: Cai Hong Zhang, Lin Bi, Zi Zhou Gong
Chapter 1: Manufacturing Technology and Processing
Abstract:The numerical simulation research on temperature field of crystal and melt by using finite differential method during the growth of Nd:GGG...
58
Authors: Xue Jian Zhang, Chun Li, Liang Gu, Jing He Liu, Guang Tian Zou
Chapter 3: Coatings, Damage Mechanics
Abstract:In this paper, the crystal growth, ceramic preparation and performance of Yb: YAG was studied systematically. The new technics that is...
1089