Paper Title:
A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique
  Abstract

A 3.1 ~ 10.6 GHz Ultra-Wideband SiGe Low Noise Amplifier (LNA) is proposed. This low noise amplifier utilizes a current-reused technique to increase the gain and extend the bandwidth. We have a detailed analysis for the input matching, noise figure, gain and other features. The LNA was designed with the TSMC 0.35µm bipolar silicon-germanium (SiGe) processes. Simulation results show that the input reflection coefficient is less than-9dB, the output reflection coefficient is less than-10dB, the maximum power gain of 17 dB and the minimum noise factor (NF) of 2.35dB. The total power consumption is 6.2 mW with 2.5V power supply.

  Info
Periodical
Edited by
Han Zhao
Pages
3251-3254
DOI
10.4028/www.scientific.net/AMM.130-134.3251
Citation
K. Li, C. Liu, X. F. Yang, Q. Feng, C. X. Zhu, G. D. Huang, "A 3.1~10.6 Ghz Ultra-Wideband SiGe Low Noise Amplifier with Current-Reused Technique", Applied Mechanics and Materials, Vols. 130-134, pp. 3251-3254, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xin Yin, Yi Yao, Jin Ling Jia
Chapter 12: Electronic and Microelectronic Technology
Abstract:This paper studies a low noise amplifier design method for 5.8G wireless local area network. Using the software of designing RF circuit...
2057
Authors: Daiki Oki, Satoru Kawauchi, Cong Bing Li, Masataka Kamiyama, Seiichi Banba, Toru Dan, Nobuo Takahashi, Haruo Kobayashi
III. Electronics, Microelectronics and Communication
Abstract:This paper presents a power-efficient noise-canceling technique based on the feed-forward amplifiers, considering a fundamental tradeoff...
109