Paper Title:
213 W 500 Mhz 4H-SiC Static Induction Transistor
  Abstract

. Silicon carbide (SiC) SITs were fabricated using home-grown epi structures. The gate is a recessed gate - bottom contact (RG - B). We designed that the mesa space 2.7μm and the gate channel is 1.2μm. One cell has 400 source fingers and each source finger width is 100μm. 1mm SiC SIT yielded a current density of 123mA/mm of drain current at a drain voltage of 20V. A maximum current density of 150 mA/mm was achieved with Vd=40V. The device blocking voltage with a gate bias of-16 V was 200 V. Packaged 24-cm devices were evaluated using amplifier circuits designed for class AB operations. A total power output in excess of 213 W was obtained with a power density of 8.5 W/cm and gain of 8.5 dB at 500 MHz under pulse operation.

  Info
Periodical
Edited by
Han Zhao
Pages
3392-3395
DOI
10.4028/www.scientific.net/AMM.130-134.3392
Citation
G. Chen, P. Wu, S. Bai, Z. Y. Li, Y. Li, W. J. Ni, Y. Z. Li, "213 W 500 Mhz 4H-SiC Static Induction Transistor", Applied Mechanics and Materials, Vols. 130-134, pp. 3392-3395, 2012
Online since
October 2011
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Andrej Mihaila, F. Udrea, Phillippe Godignon, T. Trajkovic, Gheorghe Brezeanu, Jose Rebollo, José Millan
891
Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, Anthony G. O'Neill, Keith P. Hilton, A.G. Munday, A.J. Hydes, Michael J. Uren, C. Mark Johnson
Abstract:High voltage 4H-SiC Schottky diodes with single-zone junction termination extension (JTE) have been fabricated and characterised. Commercial...
873
Authors: Lin Cheng, Anant K. Agarwal, Michael J. O'Loughlin, Craig Capell, Khiem Lam, Charlotte Jonas, Jim Richmond, Al Burk, John W. Palmour, Aderinto A. Ogunniyi, Heather K. O'Brien, Charles Scozzie
Chapter 10: Device and Application
Abstract:In this work, we report our recently developed 16 kV, 1 cm2, 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm,...
895