Paper Title:
Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter
  Abstract

For the characteristics of high frequency of switching devices in the photovoltaic inverter and complexity of circuit topology, the insulated gate bipolar transistor driving protection circuit is designed which is suitable for photovoltaic inverter. The circuit which is based on thick film structure of M57962L has isolated power supply and threshold voltage regulator circuits. The control and regulation can be achieved precisely for the threshold voltage of over current protection. The internal structure of M57962L has been analyzed here. The process of slow turn off action is observed practically. For the circuit periphery parameters of M57962L, the general calculation methods are given according to various models and the level of protection for IGBT. The practical application shows that the method is correct and effective.

  Info
Periodical
Edited by
Han Zhao
Pages
4118-4121
DOI
10.4028/www.scientific.net/AMM.130-134.4118
Citation
S. Q. Gong, M. Tang, L. Y. Cui, "Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter", Applied Mechanics and Materials, Vols. 130-134, pp. 4118-4121, 2012
Online since
October 2011
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$32.00
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