Paper Title:
Preparation and Characteristic Measurement of Born Doped Diamond Film Electrode on Tantalum Substrate and its Properties for Degradation of High COD Wastewater
  Abstract

The boron-doped diamond film electrode grown on tantalum substrate (BDD/Ta) was prepared by hot filament chemical vapor deposition (HFCVD) technique. The morphology and quality of BDD/Ta film electrode were investigated by SEM and Raman spectroscopy respectively. The electrochemical behavior of the BDD/Ta film electrodes in Na2SO4 solution was also investigated by cyclic voltammetry and the window potential of BDD/Ta film electrode in Na2SO4 solution is of 4.1V, the hydrogen and oxygen evolution potentials are of-1.8V and +2.3V respectively. The characteristic measurements of BDD/Ta film electrode and its application to degradation of high concentration organic wastewater indicated that BDD/Ta film electrode have a series of advantages, including high overpotential for oxygen revolution, high current efficiency, good removal of chemical oxygen demand (COD).

  Info
Periodical
Chapter
Chapter 2: Material Science and Engineering
Edited by
Honghua Tan
Pages
612-617
DOI
10.4028/www.scientific.net/AMM.138-139.612
Citation
C. Y. Gao, "Preparation and Characteristic Measurement of Born Doped Diamond Film Electrode on Tantalum Substrate and its Properties for Degradation of High COD Wastewater", Applied Mechanics and Materials, Vols. 138-139, pp. 612-617, 2012
Online since
November 2011
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