Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron

Zhang, Jian Xin; Liu, Jun Xing; Wan, You Bao

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Paper Title:

Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron

Periodical	Applied Mechanics and Materials (Volume 161)
Main Theme	Advanced Materials and Engineering Applications
Edited by	Jiatao Zhang
Pages	140-143
DOI	10.4028/www.scientific.net/AMM.161.140
Citation	Jian Xin Zhang et al., 2012, Applied Mechanics and Materials, 161, 140
Online since	March, 2012
Authors	Jian Xin Zhang, Jun Xing Liu, You Bao Wan
Keywords	Electron, Interface Density, MOS, Radiation
Price	US$ 28,-

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Abstract

×MOS structure has been radiated by electron, dosage is 2×10¹³ cm^-2 ~ 1×10¹⁴ cm^-2. The interface density distributing in energy band has been tested by quasi-static method. It is found that interface density increase while electron dosage increasing. When dosage arrived to 1×10¹⁴ cm^-2, interface density arrives to 10¹³(cm^-2eV^-1),which is two order of magnitude higher than without irradiation. Further more, the shapes of density increase curve are completely different.