Paper Title:

Ring-Shaped Silicon Resonator Using (2,1) In-Plane Resonance Mode

Periodical Applied Mechanics and Materials (Volume 189)
Main Theme Frontier in Information Engineering for Mechanics and Materials
Edited by Xiancan Deng and Yoshinori Hayafuji
Pages 274-280
DOI 10.4028/www.scientific.net/AMM.189.274
Citation Kenta Suzuki et al., 2012, Applied Mechanics and Materials, 189, 274
Online since July, 2012
Authors Kenta Suzuki, Kumiko Ioka, Yasushiro Nishioka
Keywords (2,1) In-Plane Mode, Anodic Bonding, Ring-Shaped Silicon Resonator
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Abstract

A ring-shaped low-frequency resonator operating in the in-plane (2,1) mode was designed and fabricated utilizing anodic bonding of a 9-µm-thick single-crystal silicon to a glass substrate. Although the gap between the ring and the driving electrode was relatively large (900 nm), a high quality factor of 4212 at 1.609 MHz was realized. The motional resistance was 1.853 MW. In addition, the resonant frequency was electrically tuned by varying the dc bias of drive electrodes with 21.5 ppm/V. Therefore, it was expected that this resonator could possibly replace low frequency quarts resonators of a few MHz ranges.