The special physicochemical environment caused by sonic-vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon films. Experimental results show that sonic—chemical treatment is an effective technology for the improvement of the microstructure of porous silicon, and the luminescent efficiency and stability thereof. Luminescent porous silicon films, prepared by ultrasonic—enhanced anode electrochemical etching, display better qualities than the samples prepared by conventional methods widely used at present. This ultrasonic—chemical effect roots in sonic—vacating, i.e. the generation, formation and rapid collapse of bubbles in the etching solution. In the process of the porous silicon being etched, the escape rate and caving-in of hydrogen bubbles in the pores is increased as a result of the work of the ultrasonic waves, which is helpful to the vertical etching of the pores.