Paper Title:
Influence of Direct Current Magnetron Sputtering Parameters on Electrical Properties of Copper Films
  Abstract

Cu thin films were prepared by DC magnetron sputtering on Si substrate, and the resistivities change by adjusting its sputtering parameters. It is found that the changes of the sputtering power and substrate temperature and working pressure can affect significantly the Cu film resistivity (ρ). The Cu films resistivity decreases with the increasing of sputtering power. As the substrate temperature “structure zone model” effect, the Cu film resistivity decreases when the substrate temperature was less than 150°C. The resistivities (ρ) begin to increase gradually at various temperatures ranging from 150°C to 300°C, but the rate of increase is not significant. The resistivity abnormal increases when the substrate temperature was 400°C. The Cu films resistivity increases with argon working gas pressure ranging from 0.15 Pa to 2 Pa.

  Info
Periodical
Edited by
Yi-Min Deng, Aibing Yu, Weihua Li and Di Zheng
Pages
540-543
DOI
10.4028/www.scientific.net/AMM.37-38.540
Citation
Y. Q. Hua, R. F. Chen, Z. X. Niu, J. Yu, "Influence of Direct Current Magnetron Sputtering Parameters on Electrical Properties of Copper Films", Applied Mechanics and Materials, Vols. 37-38, pp. 540-543, 2010
Online since
November 2010
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$32.00
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