Paper Title:
The Study on the Infrared Thermal Radiation Response of Y1Ba2Cu3O7-X Semiconducting Film
  Abstract

Y1Ba2Cu3O7-x semiconducting thin films with different buffer have been manufactured by direct current magnetic sputtering and annealing method, and their infrared thermal radialization respond have been studied. The microstructure of Y1Ba2Cu3O7-x film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconducting Y1Ba2Cu3O7-x thin film which have buffer layer is better and their Signal-to-Noise is higher. It is believed that the Y1Ba2Cu3O7-x not only have good speciality for its thermal radiation respond in infrared band but also have good performance in sub-millimeter band. It will act as new sensor elements of infrared bolometer working at room temperature.

  Info
Periodical
Edited by
Zhu Zhilin & Patrick Wang
Pages
830-834
DOI
10.4028/www.scientific.net/AMM.40-41.830
Citation
S. De, "The Study on the Infrared Thermal Radiation Response of Y1Ba2Cu3O7-X Semiconducting Film", Applied Mechanics and Materials, Vols. 40-41, pp. 830-834, 2011
Online since
November 2010
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