TiSi2 (Titanium disilicide) has attracted great research interest due to its large silicon content, remarkably low electrical resistivity (about13–16μΩcm), good photocatalytic property, high temperature stability, and good corrosion resistance. It is an excellent electronic material and potential photocatalyst and high temperature structure material. In this work, TiSi2 was prepared by using the “chemical oven” enhanced self-propagating combustion method from the elemental powder compact. The mixture of Si and Ti (atomic ratio 3:5) were ignited as chemical oven. The composition of product was detected by XRD. Result shows the product is a single phase titanium disilicide with trace impurities. The maximum combustion temperature of Ti+2Si compact was up to 1472°C, which exceeds the lowest eutectic point (1330°C) of the Ti-Si binary mixture. Thus it can be predicted the formation of TiSi2 is primarily dominated by the solid-liquid mechanism, which includes dissolving solid reactants and precipitating silicide product. It could also be convinced by SEM photos of the combustion product and reacting zone of the compact.