Paper Title:
Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer
  Abstract

Thermal annealing effects on the recovery of surface-etched nanoporous n-type gallium nitride (GaN) templates for growth optimization have been investigated. The electrical and optical performances of nanoporous GaN templates can be improved by annealed at 950°C within the NH3 ambient, leading to the quality increase for subsequent growth. Mechanisms responsible for reducing defects and recovering nonstoichiometric layer are then discussed.

  Info
Periodical
Edited by
Ran Chen
Pages
3016-3020
DOI
10.4028/www.scientific.net/AMM.44-47.3016
Citation
X. Z. Wang, G. H. Yu, S. G. Li, C. G. Wu, "Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer", Applied Mechanics and Materials, Vols. 44-47, pp. 3016-3020, 2011
Online since
December 2010
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