Paper Title:
Solid-Phase Crystallization of a-Si:H by RTA
  Abstract

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapid thermal annealing (RTA) at the same temperature for different time. From X-ray diffraction (XRD) and scanning electronic microscope (SEM), it is found that the grain size is biggest crystallized at 720°C for 8 min, an average grain size of 28nm or so is obtained. The thin film is smoothly and perfect structure.

  Info
Periodical
Edited by
Ran Chen
Pages
4151-4153
DOI
10.4028/www.scientific.net/AMM.44-47.4151
Citation
R. M. Jin, D. Z. Li, L. L. Chen, X. J. Han, J. X. Lu, "Solid-Phase Crystallization of a-Si:H by RTA", Applied Mechanics and Materials, Vols. 44-47, pp. 4151-4153, 2011
Online since
December 2010
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