Paper Title:
Quantum State in Solid-Phase Crystallization of a-Si:H by FA
  Abstract

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.

  Info
Periodical
Edited by
Ran Chen
Pages
4154-4156
DOI
10.4028/www.scientific.net/AMM.44-47.4154
Citation
R. M. Jin, D. Z. Li, L. L. Chen, X. J. Han, J. X. Lu, "Quantum State in Solid-Phase Crystallization of a-Si:H by FA", Applied Mechanics and Materials, Vols. 44-47, pp. 4154-4156, 2011
Online since
December 2010
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