Paper Title:
Improved Ghost Plating of Light-Induced Plating on Crystalline Silicon Solar Cells by SiO2/SiN Selective Etching
  Abstract

In this paper, the ghost plating problems of crystalline silicon solar cells is studied in theory and experiment. After laser doping process, a pretreatment process is needed to remove SiO2 in the heavy doping area and keep SiN mask simultaneously by using chemical solution containing HF. Otherwise, the unexpected non-heavy-doping area would be plated with silver, resulting in the ghost plating problems. The mechanism of HF etching SiO2 and SiN is analyzed and the feasibility of selective etching is discussed. By changing the main aspects of affecting the etching rate, the ghost plating of crystalline silicon solar cells is improved.

  Info
Periodical
Chapter
Chapter 4: Frontiers of Energy Engineering and Materials
Edited by
Dongye Sun, Wen-Pei Sung and Ran Chen
Pages
2290-2293
DOI
10.4028/www.scientific.net/AMM.71-78.2290
Citation
T. Li, C. L. Zhou, Z. G. Liu, W. J. Wang, Y. Song, Z. H. Gao, Y. Duan, Y. Z. Li, "Improved Ghost Plating of Light-Induced Plating on Crystalline Silicon Solar Cells by SiO2/SiN Selective Etching", Applied Mechanics and Materials, Vols. 71-78, pp. 2290-2293, 2011
Online since
July 2011
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Price
$32.00
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