Paper Title:
1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern
  Abstract

According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 nm with the minimal full width at half maximum (FWHM) horizontal angle of 2.7° while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.

  Info
Periodical
Chapter
Optical and Visual Signal
Edited by
Aimin Yang, Jingguo Qu and Xilong Qu
Pages
590-593
DOI
10.4028/www.scientific.net/AMM.84-85.590
Citation
Z. L. Qiao, S. Y. Zhang, X. Gao, P. Lu, H. Li, Y. Qu, G. J. Lui, B. X. Bo, "1064 nm High-Power Broad Area Semiconductor Lasers with Electrode Pattern", Applied Mechanics and Materials, Vols. 84-85, pp. 590-593, 2011
Online since
August 2011
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