Paper Title:
Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate
  Abstract

This paper reports the successful substrate transfer based on standard IC processing to an alternative substrate e.g. plastic. The device on ultra-thin Si substrate using grinding backside Si and thermo-compression bonding process is proposed. Acceptable electrical performances are achieved means that the substrate transfer process is controlled well. The DC characteristics of nMOSFETs as a function of orientations and device sizes under mechanical strain are also reported. Good performance and reliability of nMOSFETs under mechanical strain is obtained. The results suggest the feasibility of substrate transfer in achieving well-performance nMOSFETs for 3D integration or SiP technologies.

  Info
Periodical
Edited by
Ford Lumban Gaol, Mehdi Roopaei, Svetlana Perry and Jessica Xu
Pages
129-131
DOI
10.4028/www.scientific.net/AMM.87.129
Citation
H. L. Kao, J. Y. Ke, M. T. Chen, Y. C. Lee, C. S. Yeh, S. P. Shih, "Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate", Applied Mechanics and Materials, Vol. 87, pp. 129-131, 2011
Online since
August 2011
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Price
$32.00
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