Paper Title:
Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons
  Abstract

Within former research, it has been found that Collection to Base (CB) reversal junction of partial kinds of high-frequency low-power Silicon dynatrons is the most sensitive port to ESD. It is different from what people know as usual. By the computer emulation, the failure mechanism of ESD injection is analyzed. And the difference between CB reversal junction and EB reversal junction has been discussed in detail.

  Info
Periodical
Chapter
Chapter 6: Power and Control Electronics
Edited by
Xingui He, Ertian Hua, Yun Lin and Xiaozhu Liu
Pages
346-349
DOI
10.4028/www.scientific.net/AMM.88-89.346
Citation
J. Yang, Y. Z. Hu, Z. C. Wu, "Emulation and Analysis on the ESD Sensitive Port of High-Frequency Low-Power Silicon Dynatrons", Applied Mechanics and Materials, Vols. 88-89, pp. 346-349, 2011
Online since
August 2011
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Price
$32.00
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