Paper Title:
Anisotropic Lapping of Single Crystal Sapphire
  Abstract

Lapping processes of single crystal sapphire are investigated in relation to crystallo- graphic orientation, the influence of the crystal anisotropism under different lapping liquid concentration, loading forces on materials removal rate and roughness in sapphire lapping is discussed. C-plane(0001),M-plane ( ),R-plane ( ),A-plane ( ) sapphire wafers were used for lapping experiments, experimental results show that Surface roughness is depend on the fracture toughness, surface orientation with higher fracture toughness such as C-plane would get better roughness during lapping, material removal rate of R-plane is the lowest in four planes, it is for elastic modulus and fracture toughness of R-plane are less than other three planes.

  Info
Periodical
Advanced Materials Research (Volumes 102-104)
Edited by
Guozhong Chai, Congda Lu and Donghui Wen
Pages
502-505
DOI
10.4028/www.scientific.net/AMR.102-104.502
Citation
P. Zhou, P. F. Gao, W. F. Wang, D. H. Wen, "Anisotropic Lapping of Single Crystal Sapphire", Advanced Materials Research, Vols. 102-104, pp. 502-505, 2010
Online since
March 2010
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Price
$32.00
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