Paper Title:

Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics

Periodical Advanced Materials Research (Volumes 105 - 106)
Main Theme Chinese Ceramics Communications
Edited by Wei Pan and Jianghong Gong
Pages 245-247
DOI 10.4028/www.scientific.net/AMR.105-106.245
Citation Yan Jie Zhang et al., 2010, Advanced Materials Research, 105-106, 245
Online since April, 2010
Authors Yan Jie Zhang, Zhi Jun Xu, Rui Qing Chu, Ji Gong Hao, Guo Rong Li, Qing Rui Yin, Pei Ying Zhu, Xin Wu, Qing Jun Lu, Lei Ding
Keywords Bismuth Layer Structure, Dielectric, Ferroelectric, Sr2Bi(4-x/3)Ti(5-x)VxO18
Price US$ 28,-
Article Preview
View full size
Abstract

Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.