Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics
| Periodical | Advanced Materials Research (Volumes 105 - 106) |
|---|---|
| Main Theme | Chinese Ceramics Communications |
| Edited by | Wei Pan and Jianghong Gong |
| Pages | 245-247 |
| DOI | 10.4028/www.scientific.net/AMR.105-106.245 |
| Citation | Yan Jie Zhang et al., 2010, Advanced Materials Research, 105-106, 245 |
| Online since | April, 2010 |
| Authors | Yan Jie Zhang, Zhi Jun Xu, Rui Qing Chu, Ji Gong Hao, Guo Rong Li, Qing Rui Yin, Pei Ying Zhu, Xin Wu, Qing Jun Lu, Lei Ding |
| Keywords | Bismuth Layer Structure, Dielectric, Ferroelectric, Sr2Bi(4-x/3)Ti(5-x)VxO18 |
| Price | US$ 28,- |
Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.