Paper Title:
Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics
  Abstract

Sr2Bi (4-x/3) Ti (5-x) VxO18 (x = 0.0-0.06) (SBTV) ceramics were prepared by a solid-state reaction method, and the ferroelectric and dielectric properties of the ceramics were investigated with respect to the amount of V deficiency. XRD analysis indicated that the oxide compounds were Aurivillius phases. The Curie temperature of SBTV ceramics was improved by doping of certain amount of V. The V deficiency also led to a steady increase in the density together with a decrease in the coercive field. For the ceramics with x = 0.06, the properties become optimum: d33 = 19 pC/N, Tc = 306oC, Ec = 43.7 KV/cm.

  Info
Periodical
Advanced Materials Research (Volumes 105-106)
Edited by
Wei Pan and Jianghong Gong
Pages
245-247
DOI
10.4028/www.scientific.net/AMR.105-106.245
Citation
Y. J. Zhang, Z. J. Xu, R. Q. Chu, J. G. Hao, G. R. Li, Q. R. Yin, P. Y. Zhu, X. Wu, Q. J. Lu, L. Ding, "Ferroelectric and Dielectric Properties of Vanadium-Doped Bismuth Layer Sr2Bi4Ti5O18 Ceramics", Advanced Materials Research, Vols. 105-106, pp. 245-247, 2010
Online since
April 2010
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$32.00
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