Paper Title:
Optical and Electrical Properties of Transparent Conduction ITO Films Prepared by Dip-Coating Process
  Abstract

Transparent conductive ITO films were fabricated on soda lime float glass substrate by colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was systematically studied that the effect of the electrical, the structure and optical properties of the ITO doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase of the annealing temperature and holding time; the transmissivity of the ITO films was higher than 80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).

  Info
Periodical
Advanced Materials Research (Volumes 11-12)
Main Theme
Edited by
Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang
Pages
171-174
DOI
10.4028/www.scientific.net/AMR.11-12.171
Citation
S. J. Piao, J. X. Liu, N. Zhang, "Optical and Electrical Properties of Transparent Conduction ITO Films Prepared by Dip-Coating Process", Advanced Materials Research, Vols. 11-12, pp. 171-174, 2006
Online since
February 2006
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Price
$32.00
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