Paper Title:
Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method
  Abstract

Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 1200°C showed good crystallinity. Photoluminescence spectra of GaN films grown by the three step growth technique showed a strong near-band-edge emission and a weak yellow luminescence.

  Info
Periodical
Advanced Materials Research (Volumes 11-12)
Main Theme
Edited by
Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang
Pages
261-264
DOI
10.4028/www.scientific.net/AMR.11-12.261
Citation
K. Takahashi, K. Yasui, M. Suemitsu, A. Kato, Y. Kuroki, M. Takata, T. Akahane, "Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method", Advanced Materials Research, Vols. 11-12, pp. 261-264, 2006
Online since
February 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Huiqiang Yu, Lin Chen, Rong Zhang, Xiang Qian Xiu, Zi Li Xie, Yu Da Ye, Shu Lin Gu, Bo Shen, Yi Shi, You Dou Zheng
Abstract:GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN...
3783
Authors: Jae Chul Song, D.H. Kang, Byung Young Shim, Eun A Ko, Dong Wook Kim, Kannappan Santhakumar, Cheul Ro Lee
Abstract:GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by...
355
Authors: Yvon Cordier, Marc Portail, Sébastien Chenot, Olivier Tottereau, Marcin Zielinski, Thierry Chassagne
Abstract:Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows...
1277
Authors: Zhe Chuan Feng, C. Tran, Ian T. Ferguson, J.H. Zhao
Abstract:Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition...
1313
Authors: Saleh H. Abud, Hassan Zainuriah, Fong Kwong Yam, Alaa J. Ghazai
Abstract:In this paper, InGaN/GaN/AlN/Si (111) structure was grown using a plasma-assisted molecular beam epitaxy (PA-MBE) technique. The structural...
368