Paper Title:
Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment
  Abstract

A compact angle-resolved secondary ion mass spectrometer (AR-SIMS) with a special geometrical configuration, composing of a differentially pumped micro-beam ion-gun, a tiltable sample stage and a time-of-flight (TOF) mass spectrometer was applied to measure angular distribution (AD) of secondary ions ejected from VN by oblique 3 keV Ar+ sputtering at room temperature. AD of V+ was almost identical with that of N+, strongly suggesting that Gibbsian segregation did not take place during sputtering. Since the angular dependence of VN+/V+ and V2 +/V+ intensity ratios was independent of that of N+ and V+ intensities, VN+ and V2 + dimer ions were generated via the “as such” direct emission process.

  Info
Periodical
Advanced Materials Research (Volumes 11-12)
Main Theme
Edited by
Masayuki Nogami, Riguang Jin, Toshihiro Kasuga and Wantai Yang
Pages
607-610
DOI
10.4028/www.scientific.net/AMR.11-12.607
Citation
S. Kawaguchi, M. Kudo, M. Tanemura, L. Miao, S. Tanemura, Y. Gotoh, M. Liao, S. Shinkai, "Angle Dependent Sputtering and Dimer Formation from Vanadium Nitride Target by Ar+ Ion Bombardment", Advanced Materials Research, Vols. 11-12, pp. 607-610, 2006
Online since
February 2006
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Price
$32.00
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