Paper Title:
A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications
  Abstract

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

  Info
Periodical
Advanced Materials Research (Volumes 123-125)
Edited by
Joong Hee Lee
Pages
1207-1210
DOI
10.4028/www.scientific.net/AMR.123-125.1207
Citation
C. Das, G. Mohan Rao, S. Asokan, "A Comparative Study of Electrical Switching Behavior of Certain Tellurium Based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications", Advanced Materials Research, Vols. 123-125, pp. 1207-1210, 2010
Online since
August 2010
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