GeCu(6 nm)/Si(6 nm) bilayer recording thin film was deposited on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film. Thermal analysis shows that the GeCu/Si bilayer film has two reflectivity changes with the temperature ranges, 120 °C ~ 165 °C and 310 °C ~ 340 °C. The results of dynamic tests show that the optimum jitter values at recording speeds of 1X and 4X are 5.8% and 5.9%, respectively. The modulations at 1X and 4X recording speeds are all larger than 0.4.