Paper Title:
GeCu/Si Bilayer Thin Film for Write-Once Blue Laser Optical Recording Media
  Abstract

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was deposited on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film. Thermal analysis shows that the GeCu/Si bilayer film has two reflectivity changes with the temperature ranges, 120 °C ~ 165 °C and 310 °C ~ 340 °C. The results of dynamic tests show that the optimum jitter values at recording speeds of 1X and 4X are 5.8% and 5.9%, respectively. The modulations at 1X and 4X recording speeds are all larger than 0.4.

  Info
Periodical
Advanced Materials Research (Volumes 123-125)
Edited by
Joong Hee Lee
Pages
687-690
DOI
10.4028/www.scientific.net/AMR.123-125.687
Citation
S. L. Ou, P. C. Kuo, D. Y. Chiang, C. Y. Yeh, S. H. Ma, W. T. Tang, "GeCu/Si Bilayer Thin Film for Write-Once Blue Laser Optical Recording Media", Advanced Materials Research, Vols. 123-125, pp. 687-690, 2010
Online since
August 2010
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Price
$32.00
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