Paper Title:
Investigation of Microstructure, Electrical and Optical Properties of WO3 Film by RF Magnetron Sputtering with Ar/H2
  Abstract

WO3 thin film was prepared on glass substrate at room temperature by RF magnetron sputtering deposition with hybrid (Ar+2.5% H2) gas. Effects of RF power on the microstructure, electrical and optical properties of WO3 films are investigated by field emission scanning electron microscopy, X-ray diffraction, Hall measurement and spectrometer. X-ray diffraction analysis reveals that all of the films are amorphous. The minimum resistivity of the WO3 film prepared with RF 70W is 5.74 × 10-3 -cm. The average transmittance in the visible region was decreased with increased RF power from 50W to 150W. The average transmittance was lower than 15% with RF 50W. The electrical and optical mechanisms have been explained in terms of composition and film thickness were changed with RF power.

  Info
Periodical
Advanced Materials Research (Volumes 123-125)
Edited by
Joong Hee Lee
Pages
983-986
DOI
10.4028/www.scientific.net/AMR.123-125.983
Citation
C. T. Lee, P. K. Chiu, C.N. Hsiao, C.L. Huang, T. L. Chuang, C. Y. Hua, "Investigation of Microstructure, Electrical and Optical Properties of WO3 Film by RF Magnetron Sputtering with Ar/H2", Advanced Materials Research, Vols. 123-125, pp. 983-986, 2010
Online since
August 2010
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$32.00
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