Paper Title:
The CMP by Polishing with GiP Dressed by BODD
  Abstract

Due to the continual improvement of CMP technologies, and the need for polishing delicate wafers at high speed, graphite impregnated pads (GiP) dressed by brazed organic dia mond disks (BODD) can double the throughput of wafer-pass at the reduced cost of ownership (CoO). The increased polishing rate is due to the act of nano graphite particles that absorb slurry. The nano graphite particles coated with chemical and abrasive can achieve high removal rate without causing scratches on the wafer. In addition, nano graphite particles do not stick to wafer surfaces, so they can be cleaned easily. BODD can uniquely dress GiP to create slurry channels so the pore free pad is not bottlenecked by slurry supply. This paper also demonstrated the low stress polishing by applying ultrasound during the CMP process.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
1013-1018
DOI
10.4028/www.scientific.net/AMR.126-128.1013
Citation
J. C. Sung, M. Y. Tsai, C. S. Chou, P. L. Tso, Y. T. Chen, "The CMP by Polishing with GiP Dressed by BODD", Advanced Materials Research, Vols. 126-128, pp. 1013-1018, 2010
Online since
August 2010
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Price
$32.00
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