Paper Title:
Study on the Subsurface Damage Distribution of the Silicon Wafer Ground by Diamond Wheel
  Abstract

Using the cross-section angle polishing microscopy, the subsurface damage of the silicon wafers (100) ground by the diamond wheels with different grain size were investigated, and subsurface damage distributions in different crystal orientations and radial locations of the silicon wafers (100) were analyzed. The experiment results showed that the grain size of diamond wheel has great influence on the subsurface damage depth of the ground wafer. On the ground wafer without spark-out process, the subsurface damage depth increased along the radical direction from the centre to the edge and the subsurface damage depth in <110> crystal orientation was larger than that in <100> crystal orientation; but on the ground wafer with spark-out process, the subsurface damage depth in different crystal orientations and radial locations become uniform.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
113-118
DOI
10.4028/www.scientific.net/AMR.126-128.113
Citation
S. Gao, R. K. Kang, D. M. Guo, Q. S. Huang, "Study on the Subsurface Damage Distribution of the Silicon Wafer Ground by Diamond Wheel", Advanced Materials Research, Vols. 126-128, pp. 113-118, 2010
Online since
August 2010
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$32.00
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