Paper Title:
Effect of Shear and Thermal Characteristics on Chemical Mechanical Polishing
  Abstract

Chemical mechanical polishing has been widely used to achieve global planarization of wafers. In this paper, an improved designed test rig is used to acquire the signals on chemical mechanical polishing. The shear force and temperature-rise are measured during chemical mechanical polishing process. The polishing temperature is measured by T-type thermocouples screwed behind the polishing interface of the carrier. The shear force is measured by a load transducer mounted on the lever and connected with the polishing head. The parameters including down force, rotation speed, particle size and volume flow rate of slurry are investigated. The experimental results provide a good index to end-point-detection. The theoretical simulation by the average lubrication equation coincides with the experimental results. This study contributes to the understanding of chemical mechanical polishing mechanism.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
271-275
DOI
10.4028/www.scientific.net/AMR.126-128.271
Citation
H. J. Tsai, J. H. Horng, H. C. Tsai, S. J. Chiu, P. Y. Huang, "Effect of Shear and Thermal Characteristics on Chemical Mechanical Polishing", Advanced Materials Research, Vols. 126-128, pp. 271-275, 2010
Online since
August 2010
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Price
$32.00
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