Paper Title:
A Dishing Model for Chemical Mechanical Polishing of Plug Structures
  Abstract

It is well known that dishing occurring in chemical mechanical polishing of plug structures leads to considerable wafer surface non-planarity and reduces the current/charge conduction. Thus, a closed-form solution for quantitative prediction of dishing is needed. A contact-mechanics-based approach to describe the steady-state dishing occurring in chemical mechanical polishing of plug structures is presented. The model is then applied to investigate the effect of pattern geometry on dishing in details. It was shown that plug dishing strongly depends on plug size, but minimally on pattern density. In addition, the maximum value of dishing occurs at a critical pattern density for fixed pitch.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
276-281
DOI
10.4028/www.scientific.net/AMR.126-128.276
Citation
S. H. Chang, "A Dishing Model for Chemical Mechanical Polishing of Plug Structures", Advanced Materials Research, Vols. 126-128, pp. 276-281, 2010
Online since
August 2010
Export
Price
$32.00
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