Paper Title:
Study on Chemical Mechanical Polishing with Ultrasonic Vibration
  Abstract

Chemical Mechanical Polishing(CMP) is currently the most effective planarization method used in the semiconductor industry. Because of the continuous improvement of the wafer size and line width, the CMP process must be promoted and improved. Many studies have been undertaken to try and achieve both a high material remval rate (MRR) while maintaing a high surface quality of silicon wafer, however up until this point it appears that the two objectives are mutually exclusive. In this paper, an innovative method which integrated ultrasonic vibration assisted machining and CMP (UCMP) has been developed. With the use of ultrasonic vibration, the CMP efficiency and the quality of ploished suface improves considerably as shown in this paper. The basic principle effects of ultrasonic vibration are further illustrated and the experiments had been done to demostrate the proper procedure. The results showed that UCMP achieves a higher material removal rate (MRR) and better surface quality at the same time.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
311-315
DOI
10.4028/www.scientific.net/AMR.126-128.311
Citation
P. L. Tso, Y. C. Chang, "Study on Chemical Mechanical Polishing with Ultrasonic Vibration", Advanced Materials Research, Vols. 126-128, pp. 311-315, 2010
Online since
August 2010
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Price
$32.00
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