Paper Title:
High-Integrity Finishing of 4H-SiC (0001) by Plasma-Assisted Polishing
  Abstract

A novel machining method combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of difficult-to-machine materials. The irradiation of helium-based water vapor plasma efficiently oxidized the surface of single-crystal 4H-SiC (0001), and a ball-on-disc test using an alumina ceramic ball revealed that the wear rate of SiC, the surface of which was modified by the irradiation of water vapor plasma, is 20-fold higher than that of the surface without plasma irradiation. Plasma-assisted polishing using CeO2 abrasives enabled us to improve the surface roughness of SiC without introducing crystallographical subsurface damage, and a scratch-free surface with a roughness of less than 0.3 nm rms was obtained.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
423-428
DOI
10.4028/www.scientific.net/AMR.126-128.423
Citation
K. Yamamura, T. Takiguchi, M. Ueda, A. N. Hattori, N. Zettsu, "High-Integrity Finishing of 4H-SiC (0001) by Plasma-Assisted Polishing", Advanced Materials Research, Vols. 126-128, pp. 423-428, 2010
Online since
August 2010
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