Paper Title:
A Review on the CMP of SiC and Sapphire Wafers
  Abstract

Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.

  Info
Periodical
Advanced Materials Research (Volumes 126-128)
Edited by
Yunn-Shiuan Liao, Chao-Chang A. Chen, Choung-Lii Chao and Pei-Lum Tso
Pages
429-434
DOI
10.4028/www.scientific.net/AMR.126-128.429
Citation
Y. G. Wang, L. C. Zhang, "A Review on the CMP of SiC and Sapphire Wafers", Advanced Materials Research, Vols. 126-128, pp. 429-434, 2010
Online since
August 2010
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Price
$32.00
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