Paper Title:
Study on Optimization of CMP Slurry for Tantalum in ULSI Based on Taguchi Method
  Abstract

Chemical mechanical polishing (CMP) has become an essential technique in advanced ULSI process. The mechanism of Ta CMP is discussed in this paper. According to the physical and chemical properties of Ta, the alkaline polishing slurry and proper process parameters for Ta CMP are prepared. The paper optimized four key parameters-abrasive concentration, organic alkali, oxidant and surfactant concentration, obtained the comprehensive optimized slurry used in evaluating the removal rate using Taguchi method. The results indicate that: abrasive concentration is 10%, the organic alkali concentration is 15ml/L, the oxidant concentration is 10ml/L and the surfactant concentration is 10ml/L, higher removal rate can be obtained.

  Info
Periodical
Advanced Materials Research (Volumes 129-131)
Edited by
Xie Yi and Li Mi
Pages
794-798
DOI
10.4028/www.scientific.net/AMR.129-131.794
Citation
H. L. Mu, S. L. Wang, Z. X. Li, W. Z. Xu, X. Xiang, "Study on Optimization of CMP Slurry for Tantalum in ULSI Based on Taguchi Method", Advanced Materials Research, Vols. 129-131, pp. 794-798, 2010
Online since
August 2010
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