Paper Title:
A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously
  Abstract

Some new techniques include n- shielding, buried channel and field plate are firstly adopted together for design and fabrication of 4H-SiC microwave MESFETs. The testing results show that a relatively broad and uniform transconductance versus gate voltage was obtained using a 0.1m n- shielding. 0.3mm gate periphery device shows good DC and RF performance such as 5.27W/mm power density, 6.7dB power gain and 43% power added efficiency at 2.3GHz under pulse operation. Compared to conventional SiC MESFETs, a gate lag ratio as high as 0.84 can be achieved for the developed devices even under a nearly actual operating condition.

  Info
Periodical
Advanced Materials Research (Volumes 148-149)
Edited by
Xianghua Liu, Zhengyi Jiang and Jingtao Han
Pages
1182-1187
DOI
10.4028/www.scientific.net/AMR.148-149.1182
Citation
H. J. Jia, Y. T. Yang, C. C. Chai, "A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously", Advanced Materials Research, Vols. 148-149, pp. 1182-1187, 2011
Online since
October 2010
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$32.00
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