Paper Title:
Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method
  Abstract

We report the structural and optical properties of a-Al2O3 film grown on porous silicon substrate using sol-gel method. The results indicated that a-Al2O3 film were grown after it sintering at 1200 °C for 1 hour and the scanning electron microscopy image shows the a-Al2O3 film has a nanostructure. From the photoluminescence spectrum, it shows that a narrow purple emission peak. This proved porous silicon is a good substrate to grow a-Al2O3 film.

  Info
Periodical
Advanced Materials Research (Volumes 148-149)
Edited by
Xianghua Liu, Zhengyi Jiang and Jingtao Han
Pages
841-844
DOI
10.4028/www.scientific.net/AMR.148-149.841
Citation
F. R. Zhong, C. J. Tie, X. Y. Lv, J. Q. Mo, Z. H. Jia, T. Jiang, "Nano-Al2O3 Film Prepared on Porous Silicon by Sol-Gel Method", Advanced Materials Research, Vols. 148-149, pp. 841-844, 2011
Online since
October 2010
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$32.00
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