Paper Title:
The Relationship between Residual Stress and Resistivity of Au/NiCr/Ta Multi-Layered Metallic Films by Magnetron Sputtering
  Abstract

Au/NiCr/Ta multi-layered metallic films were deposited on Al2O3 substrate by magnetron sputtering at different substrate temperature. The effect of substrate temperature on magnetron sputtering Au/NiCr/Ta films in crystal orientation, residual stress and resistivity was investigated. The all magnetron sputtering films were highly textured with dominant Au-(111) orientation or a mixture of Au-(111) and Au-(200) orientation. The residual stress in magnetron sputtering films at different substrate temperature was tensile stress with 155MPa-400MPa. A smallest resistivity of 3.6µΩ.cm was obtained for Au/NiCr/Ta multi-layered metallic films at substrate temperature 180°C. The experiment results reveal that the resistivity increased with the increase of the residual stress of metallic films.

  Info
Periodical
Advanced Materials Research (Volumes 150-151)
Edited by
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
Pages
14-17
DOI
10.4028/www.scientific.net/AMR.150-151.14
Citation
W. Tang, X. H. Wang, Y. P. Chao, K. W. Xu, "The Relationship between Residual Stress and Resistivity of Au/NiCr/Ta Multi-Layered Metallic Films by Magnetron Sputtering", Advanced Materials Research, Vols. 150-151, pp. 14-17, 2011
Online since
October 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Bum Rae Cho
Abstract:Indium tin oxide (ITO) used in many applications such as electronic and optical devices were deposited on the soda lime glass substrate by...
195
Authors: Xiao Long Weng, Wu Tang, Yu Tao Wu, Long Jiang Deng
Abstract:Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET) substrate by magnetron sputtering at low deposition...
1867
Authors: S.C. Chen, T.Y. Kuo, Y.C. Lin, Po Cheng Kuo
Abstract:The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of...
859
Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li
Chapter 3: Surface, Subsurface, and Interface Phenomena
Abstract:Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films...
822
Authors: Fei Xiong Mao, Tao Liu, Shi Wei Liu, Jing Kun Yu
Chapter 16: Sustainable Manufacturing Technologies
Abstract:Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were...
2834