Transparent conducting Al-doped ZnO films were prepared by ultrasonic spray pyrolysis technique on amorphous glass substrates under atmospheric environment with substrate temperature ranging from 350 to 500 , and Al/ZnO molar ratio of 1, 3 and 5 %. The impacts of the substrate temperature and doping level on structural, optical and electrical properties of the ZnO:Al thin films were investigated. The texture coefficient calculated from XRD data indicates that the substrate temperature at 450 and the doping level of 3 at.% is beneficial for crystal growth along (002) orientation. The Band gap (Eg) and Urbach parameter (E0) deduced by the optical absorption edge increases and decreases with the increase of Al doping level, respectively. The increase in sheet resistance is assumed to be associated with the decrease in preferential orientation and formation of Al2O3-x clusters.