Paper Title:
Effect of Annealing Temperature on Properties of ZnO Thin Films
  Abstract

ZnO thin films were deposited by DC reactive magnetron sputtering, and the samples were annealed from 100°C to 400°C, respectively. With the help of x-ray diffractmeter (XRD), spectrophotometer, and photoluminescence (PL) spectroscopy system, the microstructure, intrinsic stress, optical properties, and PL properties were investigated, respectively. The XRD results reveal that all the ZnO films are found to have the hexagonal wurtzite structure with prominent (002) peak. With the annealing temperature increasing, the grain size increased accordingly. All the samples exhibit compressive stress, and the stress value decreasing with annealing temperature increasing. Optical transmittance spectra investigated that all the samples have high transmittance in visible range. With annealing temperature increasing, peak transmittance rising of the sample were observed. The fundamental absorption edge, which associated with band gap of materials, shifting to longer wavelength is observed too. PL results shows that the sample annealed with 300°C have higher intensity emission peak.

  Info
Periodical
Advanced Materials Research (Volumes 150-151)
Edited by
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
Pages
1796-1800
DOI
10.4028/www.scientific.net/AMR.150-151.1796
Citation
D. P. Zhang, P. Fan, Z. H. Zheng, X. M. Cai, L. Mao, T. B. Chen, J. R. Chi, "Effect of Annealing Temperature on Properties of ZnO Thin Films", Advanced Materials Research, Vols. 150-151, pp. 1796-1800, 2011
Online since
October 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Wan Li Zhang, Hong Chuan Jiang, Bin Peng, Wen Xu Zhang, Shi Qing Yang
Abstract:In this paper, the influences of annealing temperature on TbFe magnetostrictive film magnetic and magnetostrictive characteristics were...
3741
Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li
Chapter 9: Composite Materials II
Abstract:Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of...
2770
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439
Authors: S.A. Aly
Abstract:A Vanadium Pentoxide Sample with a Film Thickness of 75 Nm Has Been Thermally Evaporated on Unheated Glass Substrate Using...
139