Paper Title:
Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition
  Abstract

Effect of thermal treatments on the structural and electrical properties of the chemical bath deposition derived Ti-doped ZnO thin films are studied. XRD results show that the annealed Ti-doped ZnO films with wurtzite structure are randomly oriented. Crystallite structure, carrier concentration, resistivity and mobility are found to be dependent on the treatment temperature. At a treatment temperature of 100°C, the Ti-doped ZnO film possesses a carrier concentration of 1.3×1020 cm-3, a resistivity of 3×10-3 Ω-cm, and a mobility of 15 cm2/Vs.

  Info
Periodical
Advanced Materials Research (Volumes 150-151)
Edited by
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
Pages
252-256
DOI
10.4028/www.scientific.net/AMR.150-151.252
Citation
C. H. Hsu, S. F. Yan, C. H. Lai, "Study and Preparation of Ti-Doped ZnO Thin Films by Using Chemical Bath Deposition", Advanced Materials Research, Vols. 150-151, pp. 252-256, 2011
Online since
October 2010
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Price
$32.00
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