Paper Title:
Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering
  Abstract

Ni-doped Cu3N films were prepared by radio frequency (RF) reactive magnetron sputtering method under different N2/(N2+Ar) ratios at room temperature. X-ray diffraction (XRD) patterns show that Ni-doped Cu3N films have the preferred growth along the (100) plane. The lattice parameters of Ni-doped Cu3N films increases obviously compared with the pure Cu3N films, which indicate that some Ni atoms are incorporated into the Cu3N host lattice. The electrical resistivity of Ni-doped Cu3N films has a remarkable change and decreases as the nitrogen ratio decreases. The optical energy gap of Ni-doped Cu3N film is around 1 eV which has no obvious change. The morphology and the thermal stability of doped Cu3N films were also studied.

  Info
Periodical
Advanced Materials Research (Volumes 150-151)
Edited by
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
Pages
72-75
DOI
10.4028/www.scientific.net/AMR.150-151.72
Citation
J. Wang, J. T. Chen, G. A. Zhang, "Structure, Electrical and Optical Properties of Ni-Doped Cu3N Films Deposited by Radio Frequency Magnetron Sputtering", Advanced Materials Research, Vols. 150-151, pp. 72-75, 2011
Online since
October 2010
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Price
$32.00
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