Paper Title:
Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon
  Abstract

We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation

  Info
Periodical
Advanced Materials Research (Volumes 150-151)
Edited by
Jinglong Bu, Zhengyi Jiang and Sihai Jiao
Pages
992-995
DOI
10.4028/www.scientific.net/AMR.150-151.992
Citation
X. Y. Lv, J. Q. Mo, F. R. Zhong, Z. H. Jia, M. Xiang, T. Jiang, "Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon", Advanced Materials Research, Vols. 150-151, pp. 992-995, 2011
Online since
October 2010
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