Paper Title:
Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface
  Abstract

An aligned carbon nanotube(CNT)array has been prepared on large area Ni-deposited silicon substrates via the pyrolysis of C2H2 using thermal chemical vapor deposition technique at 900°C. Ni nanoparticles were formed when Ni catalyst film was etched and conglomerated by NH3 pretreatment. Under the experimental conditions used, scanning electron microscope (SEM) images showed the CNTs films with 3090 nm in diameter and 17 m in length grown perpendicular to the surface of the substrates at an average growth rate of 102 m/h. Energy dispersive X-ray (EDX) spectrum is carried out to identify the composition of the CNTs and EDX analysis demonstrated that the CNTs are formed as tip growth.

  Info
Periodical
Advanced Materials Research (Volumes 152-153)
Edited by
Zhengyi Jiang, Jingtao Han and Xianghua Liu
Pages
722-725
DOI
10.4028/www.scientific.net/AMR.152-153.722
Citation
G. Li, W. M. Cheng, "Preparation and Characterisation of an Aligned Carbon Nanotube Array on the Ni-Deposited Silicon Surface", Advanced Materials Research, Vols. 152-153, pp. 722-725, 2011
Online since
October 2010
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Price
$32.00
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